A NEW CURRENT-INJECTION HETEROSTRUCTURE LASER - THE DOUBLE-BARRIER DOUBLE-HETEROSTRUCTURE LASER

被引：15

作者：

TSANG, WT

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 38卷 / 11期

关键词：

D O I：

10.1063/1.92210

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：835 / 837

页数：3

共 11 条

[1] NEW RECTIFYING SEMICONDUCTOR STRUCTURE BY MOLECULAR-BEAM EPITAXY [J].

ALLYN, CL ;

GOSSARD, AC ;

WIEGMANN, W .

APPLIED PHYSICS LETTERS, 1980, 36 (05) :373-376

[2] AMBIPOLAR TRANSPORT IN DOUBLE HETEROSTRUCTURE INJECTION-LASERS [J].

ANTHONY, PJ ;

SCHUMAKER, NE .

ELECTRON DEVICE LETTERS, 1980, 1 (04) :58-60

[3]

BOTEZ D, 1978, RCA REV, V39, P577

[4] BEAM DIVERGENCE OF EMISSION FROM DOUBLE-HETEROSTRUCTURE INJECTION LASERS [J].

CASEY, HC ;

PANISH, MB ;

MERZ, JL .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (12) :5470-5475

[5] VERY LOW-THRESHOLD DOUBLE-HETEROJUNCTION ALX GA1-X AS INJECTION LASERS [J].

ETTENBERG, M .

APPLIED PHYSICS LETTERS, 1975, 27 (12) :652-654

[6] THRESHOLD TEMPERATURE CHARACTERISTICS OF DOUBLE HETEROSTRUCTURE GA1-XALXAS LASERS [J].

GOODWIN, AR ;

PETERS, JR ;

PION, M ;

THOMPSON, GHB ;

WHITEAWAY, JEA .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) :3126-3131

[7]

GOODWIN AR, 1977, IEEE J QUANTUM ELECT, V13, P696, DOI 10.1109/JQE.1977.1069424

[8] LOW-THRESHOLD DOUBLE HETEROJUNCTION ALGAAS-GAAS LASER-DIODES - THEORY AND EXPERIMENT [J].

KRESSEL, H ;

ETTENBERG, M .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (08) :3533-3537

[9] HOW MUCH AL IN ALGAAS-GAAS LASER [J].

RODE, DL .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (09) :3887-3891

[10] EFFECT OF SUBSTRATE-TEMPERATURE ON THE CURRENT THRESHOLD OF GAAS-ALXGA1-X AS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

TSANG, WT ;

REINHART, FK ;

DITZENBERGER, JA .

APPLIED PHYSICS LETTERS, 1980, 36 (02) :118-120

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