DEFECT PRODUCTION IN ION-IMPLANTED GAAS, GAP AND INP

被引：23

作者：

WENDLER, E

WESCH, W

GOTZ, G

机构：

[1] Friedrich-Schiller-Universität Jena, Institut für Festkörperphysik, Jena, 0-6900

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1991年 / 55卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(91)96281-O

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The defect production in InP, GaP and GaAs after room temperature and 80 K implantation is investigated by means of Rutherford backscattering (RBS) and optical absorption spectroscopy. The influence of defect transformation and annealing processes during the implantation is much more essential in GaAs than in the other two A(III)B(V) compounds. In the phosphides the primarily produced defect clusters seem to be almost stable, and the crystalline-to-amorphous transition proceeds via an accumulation process. In GaAs first of all point defects and point defect complexes are produced, amorphous regions being generated by a collapse-like process.

引用

页码：789 / 793

页数：5

共 19 条

[1] APPLICATION OF LOW-ANGLE RUTHERFORD BACKSCATTERING AND CHANNELING TECHNIQUES TO DETERMINE IMPLANTATION INDUCED DISORDER PROFILE DISTRIBUTIONS IN SEMICONDUCTORS [J].