EFFECT OF WAVEFUNCTION ANISOTROPY ON THE METAL-INSULATOR-TRANSITION DENSITY IN MANY-VALLEY SEMICONDUCTORS

被引：40

作者：

BHATT, RN

机构：

来源：

PHYSICAL REVIEW B | 1981年 / 24卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.24.3630

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

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页码：3630 / 3633

页数：4

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