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EFFECTS OF RESIDUAL GASES AND RF POWER ON ITO RF-SPUTTERED THIN-FILMS

被引：9
作者：
CLEMENT, M
SANTAMARIA, J
IBORRA, E
GONZALEZDIAZ, G
机构：
[1] Univ Complutense, Madrid, Spain, Univ Complutense, Madrid, Spain
来源：
VACUUM | 1987年 / 37卷 / 5-6期
关键词：
D O I：
10.1016/0042-207X(87)90333-2
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
5
引用
收藏
页码：447 / 449
页数：3
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THIN SOLID FILMS, 1984, 114 (04) :327-334
[3]   OPTICAL AND ELECTRICAL-PROPERTIES OF RF-SPUTTERED INDIUM TIN OXIDE-FILMS [J].
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[4]  
VOSSEN JL, 1971, RCA REV, V32, P269
[5]   ANALYSIS OF SPUTTERING DISCHARGE BY OPTICAL AND MASS-SPECTROMETRY .1. PLATINUM AND TANTALUM SPUTTERED IN ARGON [J].
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