DETERMINATION OF THE SI-SIO2 BARRIER HEIGHT FROM THE FOWLER-NORDHEIM PLOT

被引：34

作者：

OLIVO, P

SUNE, J

RICCO, B

机构：

[1] DEIS, Università di Bologna

[2] DEIS, Università di Bologna

来源：

IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 11期

关键词：

D O I：

10.1109/55.119217

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper it is shown that, even considering a field-dependent Si-SiO2 barrier height for electron tunneling as predicted by the quantum-mechanical (QM) modeling of Si-SiO2 interfaces, the Fowler-Nordheim (F-N) plot is linear. It is proven that the "equivalent" barrier height extracted from the graph slope is not representative of the actual field-dependent barrier. The problem of correctly estimating the oxide field to be used in F-N plots is also addressed.

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页码：620 / 622

页数：3

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