INFLUENCE OF TEMPERATURE ON SPREADING RESISTANCE MEASUREMENT

被引：14

作者：

KRAMER, P

VANRUYVE.LJ

机构：

来源：

SOLID-STATE ELECTRONICS | 1972年 / 15卷 / 07期

关键词：

D O I：

10.1016/0038-1101(72)90096-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：757 / &

共 26 条

[1] REVERSE CURRENT-VOLTAGE CHARACTERISTICS OF METAL-SILICIDE SCHOTTKY DIODES [J].

ANDREWS, JM ;

LEPSELTER, MP .

SOLID-STATE ELECTRONICS, 1970, 13 (07) :1011-+

[2]

ARCHER RJ, 1963, ANN NY ACAD SCI, V101, P697

[3] INFLUENCE OF UNIAXIAL STRESS ON INDIRECT ABSORPTION EDGE IN SILICON AND GERMANIUM [J].

BALSLEV, I .

PHYSICAL REVIEW, 1966, 143 (02) :636-&

[4]

BULTHUIS K, 1968, PHILIPS RES REP, V23, P25

[5] EQUALITY OF TEMPERATURE DEPENDENCE OF GOLD-SILICON SURFACE BARRIER + SILICON ENERGY GAP IN AU N-TYPE SI DIODES ( PHOTOEMISSION THRESHOLD ANALYSIS 100-370 DEGREES K E ) [J].

CROWELL, CR ;

SZE, SM ;

SPITZER, WG .

APPLIED PHYSICS LETTERS, 1964, 4 (05) :91-&

[6]

GARDNER EE, 1967, MEAS TECH, P258

[7]

GIARDINI AA, 1958, AM MINERAL, V43, P957

[8] PREPARATION AND EVALUATION OF SPREADING RESISTANCE PROBE TIP [J].

GOREY, EF ;

SCHNEIDER, CP ;

POPONIAK, MR .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (05) :721-+

[9] THEORY OF SURFACE STATES [J].

HEINE, V .

PHYSICAL REVIEW, 1965, 138 (6A) :1689-&

[10]

HENISCH HK, 1957, RECTIFYING SEMICONDU, P179

← 1 2 3 →