OBSERVATION OF INTERSUBBAND SCATTERING IN A TWO-DIMENSIONAL ELECTRON-SYSTEM

[1] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[2] RECENT DEVELOPMENTS IN MOLECULAR-BEAM EPITAXY (MBE) [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 275 - 284

[3] ELECTRON-SCATTERING IN SILICON INVERSION LAYERS BY OXIDE AND SURFACE-ROUGHNESS [J]. SURFACE SCIENCE, 1976, 58 (01) : 178 - 181

[4] ELECTRONIC-PROPERTIES OF A SEMICONDUCTOR SUPER-LATTICE .2. LOW-TEMPERATURE MOBILITY PERPENDICULAR TO THE SUPER-LATTICE [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1980, 48 (03) : 865 - 873

[5] INTERSUBBAND SCATTERING EFFECT ON THE MOBILITY OF A SI (100) INVERSION LAYER AT LOW-TEMPERATURES [J]. PHYSICAL REVIEW B, 1979, 19 (12): : 6433 - 6441

[6] PRICE PB, UNPUB

[7] Stormer H. L., 1980, Journal of the Physical Society of Japan, V49, P1013

[8] STORMER HL, 1981, APPL PHYS LETT SEP

[9] 1976, SURFACE SCI, V58, pR2

[10] 1978, SURFACE SCI, V73, pR3

[1] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[2] RECENT DEVELOPMENTS IN MOLECULAR-BEAM EPITAXY (MBE) [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 275 - 284

[3] ELECTRON-SCATTERING IN SILICON INVERSION LAYERS BY OXIDE AND SURFACE-ROUGHNESS [J]. SURFACE SCIENCE, 1976, 58 (01) : 178 - 181

[4] ELECTRONIC-PROPERTIES OF A SEMICONDUCTOR SUPER-LATTICE .2. LOW-TEMPERATURE MOBILITY PERPENDICULAR TO THE SUPER-LATTICE [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1980, 48 (03) : 865 - 873

[5] INTERSUBBAND SCATTERING EFFECT ON THE MOBILITY OF A SI (100) INVERSION LAYER AT LOW-TEMPERATURES [J]. PHYSICAL REVIEW B, 1979, 19 (12): : 6433 - 6441

[6] PRICE PB, UNPUB

[7] Stormer H. L., 1980, Journal of the Physical Society of Japan, V49, P1013

[8] STORMER HL, 1981, APPL PHYS LETT SEP

[9] 1976, SURFACE SCI, V58, pR2

[10] 1978, SURFACE SCI, V73, pR3