ABSENCE OF SURFACE STATES IN OXIDIZED SI

[1] WORK FUNCTION, PHOTOELECTRIC THRESHOLD, AND SURFACE STATES OF ATOMICALLY CLEAN SILICON [J]. PHYSICAL REVIEW, 1962, 127 (01): : 150 - &

[2] OPTICAL DETECTION OF SURFACE STATES ON CLEAVED (111) SURFACES OF GE [J]. PHYSICAL REVIEW LETTERS, 1968, 21 (16) : 1170 - +

[3] CHIAROTTI G, PRIVATE COMMUNICATIO

[4] GREEN FUNCTION METHOD FOR 2-SURFACE PROBLEM [J]. SOLID STATE COMMUNICATIONS, 1970, 8 (13) : 1069 - &

[5] A NEW FORMALISM FOR ELECTRON STATES AT SURFACES .2. APPLICATION TO SURFACE STATES [J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1969, 2 (10): : 1797 - +

[6] ELECTRONIC BAND STRUCTURE AND COVALENCY IN DIAMOND-TYPE SEMICONDUCTORS [J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1969, 2 (04): : 719 - &

[7] HEINE V, 1969, STRUCTURE CHEMISTRY

[8] CORRELATION BETWEEN SURFACE STRUCTURE AND SURFACE STATES AT CLEAN GERMANIUM-(111) SURFACE [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (09) : 3758 - &

[9] INTRINSIC SURFACE STATES IN SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1968, 20 (18) : 992 - &

[10] SOME EXPERIMENTS USING A VACUUM-CLEANED SILICON P-N JUNCTION [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (05) : 848 - &

[1] WORK FUNCTION, PHOTOELECTRIC THRESHOLD, AND SURFACE STATES OF ATOMICALLY CLEAN SILICON [J]. PHYSICAL REVIEW, 1962, 127 (01): : 150 - &

[2] OPTICAL DETECTION OF SURFACE STATES ON CLEAVED (111) SURFACES OF GE [J]. PHYSICAL REVIEW LETTERS, 1968, 21 (16) : 1170 - +

[3] CHIAROTTI G, PRIVATE COMMUNICATIO

[4] GREEN FUNCTION METHOD FOR 2-SURFACE PROBLEM [J]. SOLID STATE COMMUNICATIONS, 1970, 8 (13) : 1069 - &

[5] A NEW FORMALISM FOR ELECTRON STATES AT SURFACES .2. APPLICATION TO SURFACE STATES [J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1969, 2 (10): : 1797 - +

[6] ELECTRONIC BAND STRUCTURE AND COVALENCY IN DIAMOND-TYPE SEMICONDUCTORS [J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1969, 2 (04): : 719 - &

[7] HEINE V, 1969, STRUCTURE CHEMISTRY

[8] CORRELATION BETWEEN SURFACE STRUCTURE AND SURFACE STATES AT CLEAN GERMANIUM-(111) SURFACE [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (09) : 3758 - &

[9] INTRINSIC SURFACE STATES IN SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1968, 20 (18) : 992 - &

[10] SOME EXPERIMENTS USING A VACUUM-CLEANED SILICON P-N JUNCTION [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (05) : 848 - &