SOME EXPERIMENTS USING A VACUUM-CLEANED SILICON P-N JUNCTION

被引：5

作者：

LAW, JT

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1961年 / 32卷 / 05期

关键词：

D O I：

10.1063/1.1736116

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：848 / &

相关论文

共 16 条

[1] P-LAYERS ON VACUUM HEATED SILICON
ALLEN, FG
BUCK, TM
LAW, JT
[J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (06) : 979 - 985
[2] WORK FUNCTION AND SORPTION PROPERTIES OF SILICON CRYSTALS
DILLON, JA
FARNSWORTH, HE
[J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (08) : 1195 - 1202
[3] ADSORPTION OF OXYGEN ON SILICON
EISINGER, J
LAW, JT
[J]. JOURNAL OF CHEMICAL PHYSICS, 1959, 30 (02) : 410 - 412
[4] ION BOMBARDMENT-CLEANING OF GERMANIUM AND TITANIUM AS DETERMINED BY LOW-ENERGY ELECTRON DIFFRACTION
FARNSWORTH, HE
SCHLIER, RE
GEORGE, TH
BURGER, RM
[J]. JOURNAL OF APPLIED PHYSICS, 1955, 26 (02) : 252 - 253
[5] GARRETT CG, 1959, BELL SYSTEM TECH J, V35, P1019
[6] SOME EXPERIMENTS ON, AND A THEORY OF, SURFACE BREAKDOWN
GARRETT, CGB
BRATTAIN, WH
[J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (03) : 299 - 306
[7] MEASUREMENT OF HOLE DIFFUSION IN N-TYPE GERMANIUM
GOUCHER, FS
[J]. PHYSICAL REVIEW, 1951, 81 (03): : 475 - 475
[8] THE PHOTON YIELD OF ELECTRON-HOLE PAIRS IN GERMANIUM
GOUCHER, FS
[J]. PHYSICAL REVIEW, 1950, 78 (06): : 816 - 816
[9] CALCULATION OF THE SPACE CHARGE, ELECTRIC FIELD, AND FREE CARRIER CONCENTRATION AT THE SURFACE OF A SEMICONDUCTOR
KINGSTON, RH
NEUSTADTER, SF
[J]. JOURNAL OF APPLIED PHYSICS, 1955, 26 (06) : 718 - 720
[10] SURFACE ELECTRICAL CHANGES CAUSED BY ADSORPTION OF HYDROGEN AND OXYGEN ON SILICON
LAW, JT
[J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (04) : 600 - &