ELECTROLYTIC HYDROGENATION OF P-TYPE SILICON BULK AND SURFACE MODIFICATIONS

被引：3

作者：

DEMIERRY, P ^{[1
]}

ETCHEBERRY, A ^{[1
]}

AUCOUTURIER, M ^{[1
]}

机构：

[1] CNRS,ELECTROCHIM INTERFACIALE LAB,F-92195 MEUDON,FRANCE

来源：

PHYSICA B | 1991年 / 170卷 / 1-4期

关键词：

D O I：

10.1016/0921-4526(91)90113-S

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

An electrolytic method is used to introduce hydrogen into p-type silicon, at room temperature. The results of SIMS analysis indicate that hydrogen diffuses more rapidly in highly doped samples than in low doped samples, in contrast with the results of plasma annealing. The electrochemical technique creates a large number of surface defects, probably related to the existence of a thin hydrogenated layer beneath the surface.

引用

页码：124 / 128

页数：5

共 8 条

[1] RATE OF PHOTOELECTROCHEMICAL GENERATION OF HYDROGEN AT P-TYPE SEMICONDUCTORS [J].

BOCKRIS, JOM ;

UOSAKI, K .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (09) :1348-1355

[2] EFFECT OF SURFACE PREPARATIONS ON ELECTRICAL AND CHEMICAL SURFACE-PROPERTIES OF P-TYPE SILICON [J].

DEMIERRY, P ;

BALLUTAUD, D ;

AUCOUTURIER, M ;

ETCHEBERRY, A .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (09) :2966-2973

[3]

GERISCHER H, 1960, AN REAL SOC ESPAN B, V56, P535

[4]

JOHNSON NM, 1987, PHYS REV B, V35, P4166, DOI 10.1103/PhysRevB.35.4166

[5] NEUTRALIZATION OF SHALLOW ACCEPTOR LEVELS IN SILICON BY ATOMIC-HYDROGEN [J].

PANKOVE, JI ;

CARLSON, DE ;

BERKEYHEISER, JE ;

WANCE, RO .

PHYSICAL REVIEW LETTERS, 1983, 51 (24) :2224-2225

[6]

PEARTON SJ, 1985, J ELECTRON MATER A, V14, P737

[7]

ROYMORRISON S, 1980, ELECTROCHEMISTRY SEM, P161

[8] PHOTOLUMINESCENCE STUDIES OF THE NEUTRALIZATION OF ACCEPTORS IN SILICON BY ATOMIC-HYDROGEN [J].

THEWALT, MLW ;

LIGHTOWLERS, EC ;

PANKOVE, JI .

APPLIED PHYSICS LETTERS, 1985, 46 (07) :689-691

← 1 →