PHOTOLUMINESCENCE STUDIES OF THE NEUTRALIZATION OF ACCEPTORS IN SILICON BY ATOMIC-HYDROGEN

被引：65

作者：

THEWALT, MLW ^{[1
]}

LIGHTOWLERS, EC ^{[1
]}

PANKOVE, JI ^{[1
]}

机构：

[1] RCA LABS,PRINCETON,NJ 08540

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 07期

关键词：

D O I：

10.1063/1.95531

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：689 / 691

页数：3

共 18 条

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APPLIED PHYSICS LETTERS, 1984, 44 (06) :606-608

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PANKOVE, JI ;

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APPLIED PHYSICS LETTERS, 1985, 46 (04) :421-423

[6] NEUTRALIZATION OF ACCEPTORS IN SILICON BY ATOMIC-HYDROGEN [J].

PANKOVE, JI ;

WANCE, RO ;

BERKEYHEISER, JE .

APPLIED PHYSICS LETTERS, 1984, 45 (10) :1100-1102

[7] NEUTRALIZATION OF SHALLOW ACCEPTOR LEVELS IN SILICON BY ATOMIC-HYDROGEN - REPLY [J].

PANKOVE, JI ;

CARLSON, DE ;

BERKEYHEISER, JE ;

VANCE, RO .

PHYSICAL REVIEW LETTERS, 1984, 53 (08) :856-856

[8] NEUTRALIZATION OF SHALLOW ACCEPTOR LEVELS IN SILICON BY ATOMIC-HYDROGEN - COMMENT [J].

PEARTON, SJ .

PHYSICAL REVIEW LETTERS, 1984, 53 (08) :855-855

[9] DEACTIVATION OF GROUP-III ACCEPTORS IN SILICON DURING KEV ELECTRON-IRRADIATION [J].

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TZOU, JJ ;

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APPLIED PHYSICS LETTERS, 1983, 43 (10) :962-964

[10] PHOTO-LUMINESCENCE IN HEAVILY DOPED SI-B AND SI-AS [J].

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