GROWTH AND CHARACTERIZATION OF DEVICE QUALITY GAAS PRODUCED BY LASER-ASSISTED ATOMIC LAYER EPITAXY USING TRIETHYLGALLIUM

Triethylgallium is used in combination with arsine in selective area deposition of GaAs by laser-assisted atomic layer epitaxy with the 514.5 nm line of an Ar ion laser. In addition to the much lower laser intensity required to achieve monolayer self-limiting growth than that using trimethylgallium, an intense room temperature photoluminescence response is observable from the double heterostructures of Al0.3Ga0.7As/GaAs with the central GaAs grown by this technique, indicating good quality of the GaAs material and interfaces. The GaAs also exhibits low C contamination levels as is evidenced by capacitance-voltage and secondary ion mass spectrometry measurements. GaAs and Zn-doped p+-GaAs grown by laser-assisted atomic layer epitaxy are incorporated in broad area laser devices for the first time. A threshold current density as low as 544 A cm-2 is obtained on a 570 mum long device under pulsed testing conditions at a 10 kHz repetition rate.