GAS PHASE DEPOSITING IN SILICON-CARBON SYSTEM

[1] BIEDERMAN E, 1966, J APPL PHYS, V37, P4288

[2] EPITAXIAL GROWTH OF SILICON CARBIDE BY THERMAL REDUCTION TECHNIQUE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (08) : 825 - &

[3] CHEMICAL PROCESSES IN SIC FORMATION BY REACTIVE DEPOSITION AND CHEMICAL CONVERSION [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (01) : 431 - &

[4] HARRIS JM, 1970, 2 INT C CHEM VAP DEP, P795

[5] JENNINGS VJ, 1966, J ELECTROCHEM SOC, V113, P506

[6] KNIPPENBERG WF, 1963, THESIS U LEIDEN

[7] EPITAXIAL GROWTH OF SIC FILM ON SILICON SUBSTRATE AND ITS CRYSTAL STRUCTURE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1966, 5 (10) : 874 - +

[8] NICKL J, 1966, Z ANAL CHEM FRESENIU, V221, P223

[9] NICKL JJ, 1970, Z METALLKD, V61, P54

[10] CHEMICAL VAPOR DEPOSITION IN TITANIUM-CARBON SYSTEM [J]. JOURNAL OF THE LESS-COMMON METALS, 1971, 24 (01): : 63 - &

[1] BIEDERMAN E, 1966, J APPL PHYS, V37, P4288

[2] EPITAXIAL GROWTH OF SILICON CARBIDE BY THERMAL REDUCTION TECHNIQUE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (08) : 825 - &

[3] CHEMICAL PROCESSES IN SIC FORMATION BY REACTIVE DEPOSITION AND CHEMICAL CONVERSION [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (01) : 431 - &

[4] HARRIS JM, 1970, 2 INT C CHEM VAP DEP, P795

[5] JENNINGS VJ, 1966, J ELECTROCHEM SOC, V113, P506

[6] KNIPPENBERG WF, 1963, THESIS U LEIDEN

[7] EPITAXIAL GROWTH OF SIC FILM ON SILICON SUBSTRATE AND ITS CRYSTAL STRUCTURE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1966, 5 (10) : 874 - +

[8] NICKL J, 1966, Z ANAL CHEM FRESENIU, V221, P223

[9] NICKL JJ, 1970, Z METALLKD, V61, P54

[10] CHEMICAL VAPOR DEPOSITION IN TITANIUM-CARBON SYSTEM [J]. JOURNAL OF THE LESS-COMMON METALS, 1971, 24 (01): : 63 - &