STRAIN-INDUCED HEAVY-HOLE-TO-LIGHT-HOLE ENERGY SPLITTING IN (111)B PSEUDOMORPHIC INYGA1-YAS QUANTUM-WELLS

被引:23
作者
MOISE, TS
GUIDO, LJ
BARKER, RC
机构
[1] Center for Microelectronic Materials and Structures, Yale University, New Haven, CT 06520
来源
PHYSICAL REVIEW B | 1993年 / 47卷 / 11期
关键词
D O I
10.1103/PhysRevB.47.6758
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Experimental investigation of the energy-band structure of (111)B and (100) InyGa1-yAs quantum wells demonstrates that the strain-induced heavy-hole to light-hole energy splitting is considerably larger for (111)B pseudomorphic layers than for otherwise identical (100) structures. In general, the measured energy splittings, for both orientations, agree well with a simple one-band envelope-function model that includes strain corrections. However, for (111) B InyGa1-yAs quantum wells with y greater-than-or-equal-to 0.072, there is evidence of a smaller hydrostatic strain component than is predicted by theory.
引用
收藏
页码:6758 / 6761
页数:4
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