TEMPERATURE-DEPENDENCE OF SILICON-NITRIDE ETCHING BY ATOMIC FLUORINE

被引：12

作者：

LOEWENSTEIN, LM

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 01期

关键词：

D O I：

10.1063/1.342555

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：386 / 387

页数：2

共 16 条

[1] MASS-SPECTROMETRIC STUDIES OF PLASMA-ETCHING OF SILICON-NITRIDE [J].

CLARKE, PE ;

FIELD, D ;

HYDES, AJ ;

KLEMPERER, DF ;

SEAKINS, MJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (06) :1614-1619

[2]

Flamm D.L., 1981, PLASMA CHEM PLASMA P, V1, P317, DOI [10.1007/bf00565992, DOI 10.1007/BF00565992]

[3] THE REACTION OF FLUORINE-ATOMS WITH SILICON [J].

FLAMM, DL ;

DONNELLY, VM ;

MUCHA, JA .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) :3633-3639

[4] REACTION OF FLUORINE-ATOMS WITH SIO2 [J].

FLAMM, DL ;

MOGAB, CJ ;

SKLAVER, ER .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (10) :6211-6213

[5]

HAYASAKA N, 1988, SOLID STATE TECHNOL, V31, P127

[6] CHEMISORPTION OF FLUOROCARBON FREE-RADICALS ON SILICON AND SIO2 [J].

JOYCE, S ;

LANGAN, JG ;

STEINFELD, JI .

JOURNAL OF CHEMICAL PHYSICS, 1988, 88 (03) :2027-2032

[7]

KERN W, 1978, THIN FILM PROCESSES, P401

[8] EFFECT OF OXYGEN ON FLUORINE-BASED REMOTE PLASMA-ETCHING OF SILICON AND SILICON DIOXIDE [J].

LOEWENSTEIN, LM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03) :1984-1988

[9]

LOEWENSTEIN LM, 1988, 1988 EL MAT C TECHN, P27

[10]

LOEWENSTEIN LM, 1987, MATER RES SOC S P, V98, P267

← 1 2 →