MOVPE GROWN GA0.6IN0.4SB PHOTODIODES FOR 2.55-MU-M DETECTION

被引：15

作者：

PASCALDELANNOY, F

BOUGNOT, J

ALLOGHO, GG

GIANI, A

GOUSKOV, L

BOUGNOT, G

机构：

[1] Centre d'Electronique de Montpellier, URA CNRS 391, Université de Montpellier II, Sciences et Techniques du Languedoc

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 06期

关键词：

OPTICS; PHOTODIODES; INFRARED DETECTORS; SEMICONDUCTORS DEVICES AND MATERIALS;

D O I：

10.1049/el:19920335

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Photodiodes with a long-wavelength cutoff extending out to 2.9-mu-m have been fabricated from MOVPE-grown Ga0.6In0.4Sb homojunctions. These mesa devices without any passivation or antireflecting coating exhibit a peak efficiency as high as 43% at 2.60-mu-m.

引用

页码：531 / 532

页数：2

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