THRESHOLD-VOLTAGE ANALYSIS OF SHORT-CHANNEL AND NARROW-CHANNEL MOSFETS BY 3-DIMENSIONAL COMPUTER-SIMULATION

被引：17

作者：

KASAI, R

YOKOYAMA, K

YOSHII, A

SUDO, T

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1982年 / 29卷 / 05期

关键词：

D O I：

10.1109/T-ED.1982.20792

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：870 / 876

页数：7

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