NEUTRON DAMAGE MECHANISMS IN SILICON AT 10-DEGREES-K

被引：4

作者：

KALMA, AH

FISCHER, CJ

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1977年 / 24卷 / 06期

关键词：

D O I：

10.1109/TNS.1977.4329183

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2158 / 2163

页数：6

共 26 条

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[10] PHOTOCONDUCTIVITY STUDIES OF DEFECTS IN P-TYPE SILICON - BORON INTERSTITIAL AND ALUMINUM INTERSTITIAL DEFECTS [J].

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