INFLUENCE OF IMPURITIES ON THE PERFORMANCE OF DOPED-WELL GAINAS/INP RESONANT TUNNELING DIODES

被引：7

作者：

SEKIGUCHI, T

MIYAMOTO, Y

FURUYA, K

机构：

[1] Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro-ku, Tokyo, 152

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1993年 / 32卷 / 2B期

关键词：

RESONANT TUNNELING DIODE; ELECTRON COHERENCE; IMPURITY SCATTERING; PEAK-TO-VALLEY CURRENT RATIO; RESONANCE LEVEL WIDTH; GAINAS/INP;

D O I：

10.1143/JJAP.32.L243

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of well impurity doping on the performance of GaInAs/InP resonant tunneling diodes (RTDs) was investigated. For undoped diodes, the peak-to-valley (P/V) current ratio was 9.7, at 2 X 10(17) cm-3 it was 10.8, and at 2 X 10(18) cm-3 it was 4.0. The maximum at 2 x 10(17) cm-3 can be explained by potential bending, and the decrease at 2 x 10(18) cm-3 can be explained by scattering. A change in the current-voltage characteristics at a doping level of 2 x 10(18) cm-3 can be explained by potential bending in the well. Moreover, the variation in the observed width of the resonance level can explain the change in P/V ratios.

引用

页码：L243 / L246

页数：4

共 8 条

[1]

Fukuyama H., 1992, Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials, P567

[2] EFFECTS OF IMPURITY SCATTERING ON RESONANT TRANSMISSION COEFFICIENTS IN GAAS/ALAS DOUBLE-BARRIER STRUCTURES [J].

FUKUYAMA, H ;

WAHO, T ;

MIZUTANI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1992, 31 (7A) :L823-L825

[3] NOVEL HIGH-SPEED TRANSISTOR USING ELECTRON-WAVE DIFFRACTION [J].

FURUYA, K .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (04) :1492-1494

[4] EFFECT OF INELASTIC-SCATTERING ON RESONANT AND SEQUENTIAL TUNNELING IN DOUBLE BARRIER HETEROSTRUCTURES [J].

JONSON, M ;

GRINCWAJG, A .

APPLIED PHYSICS LETTERS, 1987, 51 (21) :1729-1731

[5] NEGATIVE DIFFERENTIAL CONDUCTANCE DUE TO RESONANT STATES IN GALNAS-INP HOT-ELECTRON TRANSISTORS [J].

MIYAMOTO, Y ;

YAMAURA, S ;

FURUYA, K .

APPLIED PHYSICS LETTERS, 1990, 57 (20) :2104-2106

[6] HIGH P/V RATIO OF GAINAS INP RESONANT TUNNELING DIODE GROWN BY OMVPE [J].

SEKIGUCHI, T ;

MIYAMOTO, Y ;

FURUYA, K .

JOURNAL OF CRYSTAL GROWTH, 1992, 124 (1-4) :807-811

[7] TUNNELING SPECTROSCOPY OF RESONANT TRANSMISSION COEFFICIENT IN DOUBLE BARRIER STRUCTURE [J].

TSUCHIYA, M ;

SAKAKI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (06) :1164-1168

[8] ELASTIC-SCATTERING CENTERS IN RESONANT TUNNELING DIODES [J].

WOLAK, E ;

LEAR, KL ;

PITNER, PM ;

HELLMAN, ES ;

PARK, BG ;

WEIL, T ;

HARRIS, JS ;

THOMAS, D .

APPLIED PHYSICS LETTERS, 1988, 53 (03) :201-203

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