GAINAS/GAINASP STRAINED-QUANTUM-WELL MONOLITHIC ELECTROABSORPTION MODULATOR AMPLIFIER BY LATERAL BANDGAP CONTROL WITH NONPLANAR SUBSTRATES

被引：11

作者：

KOYAMA, F

LIOU, KY

DENTAI, AG

RAYBON, G

BURRUS, CA

机构：

[1] AT&T Bell Laboratories, Crawford Hill Laboratory, Holmdel

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 24期

关键词：

OPTICAL MODULATORS; INTEGRATED OPTOELECTRONICS;

D O I：

10.1049/el:19931407

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An electroabsorption modulator and an optical amplifier have been monolithically integrated by using nonplanar MOVPE. A bandgap shift of more than 60nm was obtained with atmospheric pressure MOVPE of GaInAs/GaInAsP strained QWs on 10mum wide ridges. A chip gain of 9dB and an extinction ratio of 17dB were obtained for the monolithic electroabsorption modulator/amplifier. The integration of an optical amplifier enables the use of a wavelength close to the bandgap of the modulator, resulting in low voltage and low chirp operation.

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页码：2104 / 2106

页数：3

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