SELECTIVE AND NONPLANAR EPITAXY OF INP, GAINAS AND GAINASP USING LOW-PRESSURE MOCVD

被引:29
作者
THRUSH, EJ [1 ]
GIBBON, MA [1 ]
STAGG, JP [1 ]
CURETON, CG [1 ]
JONES, CJ [1 ]
MALLARD, RE [1 ]
NORMAN, AG [1 ]
BOOKER, GR [1 ]
机构
[1] UNIV OXFORD,DEPT MAT,OXFORD OX1 3PH,ENGLAND
关键词
D O I
10.1016/0022-0248(92)90467-W
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Selective area and non-planar MOCVD of InP, GaInAs, and GaInAsP can radically modify the properties of these alloys relative to planar "whole wafer" epitaxy. This paper outlines qualitative and quantitative studies aimed at understanding the various, often interrelated, effects and indicates their significance to the fabrication of integrated devices.
引用
收藏
页码:249 / 254
页数:6
相关论文
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