LOW-TEMPERATURE EPITAXY OF SI AND GE BY DIRECT ION-BEAM DEPOSITION

被引：32

作者：

ZUHR, RA

APPLETON, BR

HERBOTS, N

LARSON, BC

NOGGLE, TS

PENNYCOOK, SJ

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1987年 / 5卷 / 04期

关键词：

D O I：

10.1116/1.574935

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：2135 / 2139

页数：5

共 18 条

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[9] ION-SOLID INTERACTIONS DURING ION-BEAM DEPOSITION OF GE-74 AND SI-30 ON SI AT VERY LOW ION ENERGIES (0-200 EV RANGE) [J].

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