EFFECTS OF TRICHLOROETHANE DURING OXIDE-GROWTH ON RADIATION-INDUCED INTERFACE TRAPS IN METAL/SIO2/SI CAPACITORS

被引：5

作者：

DASILVA, EF ^{[1
]}

NISHIOKA, Y ^{[1
]}

MA, TP ^{[1
]}

机构：

[1] YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 16期

关键词：

D O I：

10.1063/1.98699

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1262 / 1264

页数：3

相关论文

共 5 条

[1] CHLORINE LEVELS IN SIO2 FORMED USING TCA AND LPCVD AT LOW-TEMPERATURES
BANHOLZER, WF
GHEZZO, M
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (02) : 415 - 419
[2] 2 DISTINCT INTERFACE TRAP PEAKS IN RADIATION-DAMAGED METAL/SIO2/SI STRUCTURES
DASILVA, EF
NISHIOKA, Y
MA, TP
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (04) : 270 - 272
[3] USE OF 111-TRICHLOROETHANE AS AN OPTIMIZED ADDITIVE TO IMPROVE SILICON THERMAL-OXIDATION TECHNOLOGY
JANSSENS, EJ
DECLERCK, GJ
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (10) : 1696 - 1703
[4] DEFECT STRUCTURE AND IRRADIATION BEHAVIOR OF NONCRYSTALLINE S102
REVESZ, AG
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1971, NS18 (06) : 113 - &
[5] DEPENDENCE OF X-RAY GENERATION OF INTERFACE TRAPS ON GATE METAL INDUCED INTERFACIAL STRESS IN MOS STRUCTURES
ZEKERIYA, V
MA, TP
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) : 1261 - 1266