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USE OF 111-TRICHLOROETHANE AS AN OPTIMIZED ADDITIVE TO IMPROVE SILICON THERMAL-OXIDATION TECHNOLOGY
被引:29
作者
:
JANSSENS, EJ
论文数:
0
引用数:
0
h-index:
0
机构:
CATHOLIC UNIV LEUVEN,DEPT ELEKTROTECH,B-3030 HEVERLE,BELGIUM
CATHOLIC UNIV LEUVEN,DEPT ELEKTROTECH,B-3030 HEVERLE,BELGIUM
JANSSENS, EJ
[
1
]
DECLERCK, GJ
论文数:
0
引用数:
0
h-index:
0
机构:
CATHOLIC UNIV LEUVEN,DEPT ELEKTROTECH,B-3030 HEVERLE,BELGIUM
CATHOLIC UNIV LEUVEN,DEPT ELEKTROTECH,B-3030 HEVERLE,BELGIUM
DECLERCK, GJ
[
1
]
机构
:
[1]
CATHOLIC UNIV LEUVEN,DEPT ELEKTROTECH,B-3030 HEVERLE,BELGIUM
来源
:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
1978年
/ 125卷
/ 10期
关键词
:
D O I
:
10.1149/1.2131275
中图分类号
:
O646 [电化学、电解、磁化学];
学科分类号
:
081704 ;
摘要
:
引用
收藏
页码:1696 / 1703
页数:8
相关论文
共 67 条
[1]
AGNEW J, 1976, SOLID STATE TECHNOL, V19, P43
[2]
INFLUENCE OF CRYSTAL ORIENTATION ON SILICON SEMICONDUCTOR PROCESSING
BEAN, KE
论文数:
0
引用数:
0
h-index:
0
机构:
Texas Instruments Incorporated, Dallas
BEAN, KE
GLEIM, PS
论文数:
0
引用数:
0
h-index:
0
机构:
Texas Instruments Incorporated, Dallas
GLEIM, PS
[J].
PROCEEDINGS OF THE IEEE,
1969,
57
(09)
: 1469
-
&
[3]
Burgess R.R., 1973, SEMICONDUCTOR SILICO, P363
[4]
FAST INTERFACE-STATE LOSSES IN CHARGE-COUPLED DEVICES
CARNES, JE
论文数:
0
引用数:
0
h-index:
0
CARNES, JE
KOSONOCKY, WF
论文数:
0
引用数:
0
h-index:
0
KOSONOCKY, WF
[J].
APPLIED PHYSICS LETTERS,
1972,
20
(07)
: 261
-
+
[5]
LOW-TEMPERATURE REDUCTION OF FAST SURFACE STATES ASSOCIATED WITH THERMALLY OXIDIZED SILICON
CASTRO, PL
论文数:
0
引用数:
0
h-index:
0
CASTRO, PL
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(02)
: 280
-
+
[6]
OXIDE CHARGE REDUCTION BY CHEMICAL GETTERING WITH TRICHLOROETHYLENE DURING THERMAL OXIDATION OF SILICON
CHEN, MC
论文数:
0
引用数:
0
h-index:
0
CHEN, MC
HILE, JW
论文数:
0
引用数:
0
h-index:
0
HILE, JW
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1972,
119
(02)
: 223
-
+
[7]
EFFECTS OF MATERIAL AND PROCESSING PARAMETERS ON DIELECTRIC STRENGTH OF THERMALLY GROWN SIO2 FILMS
CHOU, NJ
论文数:
0
引用数:
0
h-index:
0
CHOU, NJ
ELDRIDGE, JM
论文数:
0
引用数:
0
h-index:
0
ELDRIDGE, JM
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1970,
117
(10)
: 1287
-
+
[8]
APPLICATION OF TRIANGULAR VOLTAGE SWEEP METHOD TO MOBILE CHARGE STUDIES IN MOS STRUCTURES
CHOU, NJ
论文数:
0
引用数:
0
h-index:
0
CHOU, NJ
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(04)
: 601
-
&
[9]
CLAEYS CL, 1977, SEMICONDUCTOR SILICO, P773
[10]
CHARACTERISTICS OF FAST SURFACE STATES ASSOCIATED WITH SIO2-SI AND SI3N4-SIO2-SI STRUCTURES
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor Research and Development Laboratory, Palo Alto, California
DEAL, BE
MACKENNA, EL
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor Research and Development Laboratory, Palo Alto, California
MACKENNA, EL
CASTRO, PL
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor Research and Development Laboratory, Palo Alto, California
CASTRO, PL
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1969,
116
(07)
: 997
-
&
←
1
2
3
4
5
6
7
→
共 67 条
[1]
AGNEW J, 1976, SOLID STATE TECHNOL, V19, P43
[2]
INFLUENCE OF CRYSTAL ORIENTATION ON SILICON SEMICONDUCTOR PROCESSING
BEAN, KE
论文数:
0
引用数:
0
h-index:
0
机构:
Texas Instruments Incorporated, Dallas
BEAN, KE
GLEIM, PS
论文数:
0
引用数:
0
h-index:
0
机构:
Texas Instruments Incorporated, Dallas
GLEIM, PS
[J].
PROCEEDINGS OF THE IEEE,
1969,
57
(09)
: 1469
-
&
[3]
Burgess R.R., 1973, SEMICONDUCTOR SILICO, P363
[4]
FAST INTERFACE-STATE LOSSES IN CHARGE-COUPLED DEVICES
CARNES, JE
论文数:
0
引用数:
0
h-index:
0
CARNES, JE
KOSONOCKY, WF
论文数:
0
引用数:
0
h-index:
0
KOSONOCKY, WF
[J].
APPLIED PHYSICS LETTERS,
1972,
20
(07)
: 261
-
+
[5]
LOW-TEMPERATURE REDUCTION OF FAST SURFACE STATES ASSOCIATED WITH THERMALLY OXIDIZED SILICON
CASTRO, PL
论文数:
0
引用数:
0
h-index:
0
CASTRO, PL
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(02)
: 280
-
+
[6]
OXIDE CHARGE REDUCTION BY CHEMICAL GETTERING WITH TRICHLOROETHYLENE DURING THERMAL OXIDATION OF SILICON
CHEN, MC
论文数:
0
引用数:
0
h-index:
0
CHEN, MC
HILE, JW
论文数:
0
引用数:
0
h-index:
0
HILE, JW
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1972,
119
(02)
: 223
-
+
[7]
EFFECTS OF MATERIAL AND PROCESSING PARAMETERS ON DIELECTRIC STRENGTH OF THERMALLY GROWN SIO2 FILMS
CHOU, NJ
论文数:
0
引用数:
0
h-index:
0
CHOU, NJ
ELDRIDGE, JM
论文数:
0
引用数:
0
h-index:
0
ELDRIDGE, JM
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1970,
117
(10)
: 1287
-
+
[8]
APPLICATION OF TRIANGULAR VOLTAGE SWEEP METHOD TO MOBILE CHARGE STUDIES IN MOS STRUCTURES
CHOU, NJ
论文数:
0
引用数:
0
h-index:
0
CHOU, NJ
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(04)
: 601
-
&
[9]
CLAEYS CL, 1977, SEMICONDUCTOR SILICO, P773
[10]
CHARACTERISTICS OF FAST SURFACE STATES ASSOCIATED WITH SIO2-SI AND SI3N4-SIO2-SI STRUCTURES
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor Research and Development Laboratory, Palo Alto, California
DEAL, BE
MACKENNA, EL
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor Research and Development Laboratory, Palo Alto, California
MACKENNA, EL
CASTRO, PL
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor Research and Development Laboratory, Palo Alto, California
CASTRO, PL
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1969,
116
(07)
: 997
-
&
←
1
2
3
4
5
6
7
→