CARBON PRECIPITATION IN SILICON - WHY IS IT SO DIFFICULT

被引:43
作者
TAYLOR, WJ
TAN, TY
GOSELE, U
机构
[1] MICROELECTR CTR N CAROLINA, RES TRIANGLE PK, NC 27709 USA
[2] DUKE UNIV, DEPT MECH ENGN & MAT SCI, DURHAM, NC 27706 USA
关键词
D O I
10.1063/1.109063
中图分类号
O59 [应用物理学];
学科分类号
摘要
It is well-established that oxygen precipitation in silicon occurs readily and is further facilitated by the presence of carbon. In contrast, carbon precipitation in silicon appears to be a difficult process which takes place only in the presence of a sufficiently high supersaturation of oxygen or silicon self-interstitials. It is suggested that a high interface energy of carbon precipitates in conjunction with the volume decrease associated with carbon precipitation or agglomeration allows one to understand the precipitation behavior of carbon in silicon.
引用
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页码:3336 / 3338
页数:3
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