EFFECTS OF CARBON-ATOMS ON THE DEFECTS IN CZOCHRALSKI-GROWN SILICON FORMED BY ANNEALING

The effects of carbon atoms on defect formation in annealings were studied. The results suggest that a defect associated with the photoluminescence line at 0.767 eV (P-line) captures the carbon atom preferentially in the formation process. By assuming that the defect is Ci-O2 (Ci: interstitial carbon atom, O: oxygen atom), the experimental results on the 0.767 eV line can be explained. It is reported that the new donor formation is suppressed in a sample that does not contain carbon atoms, but the obtained value for the new donor concentration is 2 × 1015/cm3 in carbon-lean Czochralski-grown sample (carbon concentration 1015/cm3). © 1990 The Japan Society of Applied Physics.