INFLUENCE OF CARBON ON OXYGEN BEHAVIOR IN SILICON

被引:78
作者
LEROUEILLE, J
机构
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1981年 / 67卷 / 01期
关键词
D O I
10.1002/pssa.2210670117
中图分类号
T [工业技术];
学科分类号
08 ;
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页码:177 / 181
页数:5
相关论文
共 12 条
[1]  
BATAVIN VV, 1970, SOV PHYS CRYSTALLOGR, V15, P100
[2]   SOLUBILITY OF CARBON IN PULLED SILICON CRYSTALS [J].
BEAN, AR ;
NEWMAN, RC .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (06) :1211-&
[3]   EFFECT OF CARBON ON THERMAL DONOR FORMATION IN HEAT-TREATED PULLED SILICON CRYSTALS [J].
BEAN, AR ;
NEWMAN, RC .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1972, 33 (02) :255-&
[4]   INFLUENCE OF OXYGEN ON SILICON RESISTIVITY [J].
CAZCARRA, V ;
ZUNINO, P .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) :4206-4211
[5]  
CAZCARRA V, 1979, I PHYS C SER, V46, P303
[6]   DETERMINATION OF PARTS PER BILLION OXYGEN IN SILICON THROUGH CALIBRATION OF IR-ABSORPTION AT 77 DEGREES KELVIN [J].
GRAFF, K ;
GRALLATH, E ;
ADES, S ;
GOLDBACH, G ;
TOLG, G .
SOLID-STATE ELECTRONICS, 1973, 16 (08) :887-893
[7]   RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J].
IRVIN, JC .
BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02) :387-+
[8]  
KAISER, 1956, PHYS REV, V101, P1264
[9]   MECHANISM OF THE FORMATION OF DONOR STATES IN HEAT-TREATED SILICON [J].
KAISER, W ;
FRISCH, HL ;
REISS, H .
PHYSICAL REVIEW, 1958, 112 (05) :1546-1554
[10]   COMPARISON OF 2 KINDS OF OXYGEN DONORS IN SILICON BY RESISTIVITY MEASUREMENTS [J].
KANAMORI, A ;
KANAMORI, M .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (12) :8095-8101