STRUCTURE OF SILICON-CARBIDE PRECIPITATES IN OXYGEN-IMPLANTED AND ANNEALED SILICON-ON-INSULATOR MATERIAL

被引：10

作者：

KRAUSE, SJ ^{[1
]}

JUNG, CO ^{[1
]}

WILSON, SR ^{[1
]}

机构：

[1] MOTOROLA INC,SEMICOND PROD SECTOR,CTR BIPOLAR TECHNOL,MESA,AZ 85202

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 01期

关键词：

D O I：

10.1063/1.100568

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：63 / 65

页数：3

共 22 条

[1] HIGH-QUALITY SI-ON-SIO2 FILMS BY LARGE DOSE OXYGEN IMPLANTATION AND LAMP ANNEALING
CELLER, GK
HEMMENT, PLF
WEST, KW
GIBSON, JM
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (08) : 532 - 534
[2] DEVEIRMAN A, 1987, I PHYS C SER, V87, P403
[3] ION-BEAM SYNTHESIS OF THIN BURIED LAYERS OF SIO2 IN SILICON
HEMMENT, PLF
REESON, KJ
KILNER, JA
CHATER, RJ
MARSH, C
BOOKER, GR
CELLER, GK
STOEMENOS, J
[J]. VACUUM, 1986, 36 (11-12) : 877 - 881
[4] AN INVESTIGATION OF THE PROPERTIES OF AN EPITAXIAL SI LAYER ON A SUBSTRATE WITH A BURIED SIO2 LAYER FORMED BY OXYGEN-ION IMPLANTATION
HOMMA, Y
OSHIMA, M
HAYASHI, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (06): : 890 - 895
[5] A VISCOUS-FLOW MODEL TO EXPLAIN THE APPEARANCE OF HIGH-DENSITY THERMAL SIO2 AT LOW OXIDATION TEMPERATURES
IRENE, EA
TIERNEY, E
ANGILELLO, J
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (11) : 2594 - 2597
[6] CMOS DEVICES FABRICATED ON BURIED SIO2 LAYERS FORMED BY OXYGEN IMPLANTATION INTO SILICON
IZUMI, K
DOKEN, M
ARIYOSHI, H
[J]. ELECTRONICS LETTERS, 1978, 14 (18) : 593 - 594
[7] MICROSTRUCTURE OF SILICON IMPLANTED WITH HIGH-DOSE OXYGEN IONS
JAUSSAUD, C
STOEMENOS, J
MARGAIL, J
DUPUY, M
BLANCHARD, B
BRUEL, M
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (11) : 1064 - 1066
[8] DIRECT IDENTIFICATION OF STACKING SEQUENCES IN SILICON-CARBIDE POLYTYPES BY HIGH-RESOLUTION ELECTRON-MICROSCOPY
JEPPS, NW
SMITH, DJ
PAGE, TF
[J]. ACTA CRYSTALLOGRAPHICA SECTION A, 1979, 35 (NOV): : 916 - 923
[9] KRAUSE SJ, 1987, I PHYS C SER, V87, P391
[10] Lam H. W., 1982, VLSI ELECT MICROSTRU, V4, P1

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