RECOMBINATION CENTERS IN GAMMA-IRRADIATED ARSENIC-DOPED GERMANIUM

被引：3

作者：

GERMANO, CA

CURTIS, OL

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1968年 / NS15卷 / 06期

关键词：

D O I：

10.1109/TNS.1968.4325028

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：34 / +

页数：1

共 13 条

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[4] AN EFFICIENT FLASH X-RAY FOR MINORITY CARRIER LIFETIME MEASUREMENTS AND OTHER RESEARCH PURPOSES [J].

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[6] RADIATION-INDUCED RECOMBINATION AND TRAPPING CENTERS IN GERMANIUM .2. ANNEALING IN GAMMA-IRRADIATED, ANTIMONY-, AND ARSENIC-DOPED MATERIAL [J].

CURTIS, OL ;

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CURTIS OL, 1965, RADIATION DAMAGE SEM, V143

[8]

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[9] EFFECT OF INJECTION LEVEL ON CARRIER LIFETIME IN NEUTRON-IRRADIATED GERMANIUM [J].

GERMANO, CA ;

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IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1966, NS13 (06) :47-+

[10] ELECTRON-HOLE RECOMBINATION IN GERMANIUM [J].

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