FORWARD CHARACTERISTICS OF THYRISTORS

被引：13

作者：

OTSUKA, M

机构：

来源：

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1967年 / 55卷 / 08期

关键词：

D O I：

10.1109/PROC.1967.5841

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1400 / &

共 15 条

[1] MULTITERMINAL P-N-P-N SWITCHES [J].

ALDRICH, RW ;

HOLONYAK, N .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06) :1236-1239

[2] SWITCHING PROCESSES IN ALLOYED PIN RECTIFIERS [J].

BENDA, H ;

HOFFMANN, A ;

SPENKE, E .

SOLID-STATE ELECTRONICS, 1965, 8 (12) :887-&

[3] ELECTRON-HOLE SCATTERING AT HIGH INJECTION-LEVELS IN GERMANIUM [J].

DAVIES, LW .

NATURE, 1962, 194 (4830) :762-&

[4] THE HIGH CURRENT LIMIT FOR SEMICONDUCTOR JUNCTION DEVICES [J].

FLETCHER, NH .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (06) :862-872

[5] POWER RECTIFIERS AND TRANSISTORS [J].

HALL, RN .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11) :1512-1518

[6]

HOERNI JA, 1958, IRE WESCON C REC 3, P172

[7] P+IN+ SILICON DIODES AT HIGH FORWARD CURRENT DENSITIES [J].

HOWARD, NR ;

JOHNSON, GW .

SOLID-STATE ELECTRONICS, 1965, 8 (03) :275-&

[8]

JONSCHER AK, 1958, J ELECTRON CONTR, V5, P1

[9]

JONSCHER AK, 1958, J ELECTRON CONTR, V5, P226

[10] THE FORWARD CHARACTERISTIC OF THE PIN DIODE [J].

KLEINMAN, DA .

BELL SYSTEM TECHNICAL JOURNAL, 1956, 35 (03) :685-706

← 1 2 →