FORMATION OF SHALLOW P+ LAYER IN SILICON BY PLASMA DOPING

被引：5

作者：

HARA, T ^{[1
]}

NAKAGAWA, S ^{[1
]}

SHINADA, K ^{[1
]}

NAKAMURA, S ^{[1
]}

机构：

[1] M SETEK CO LTD,TAITO KU,TOKYO 110,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 01期

关键词：

D O I：

10.1063/1.109707

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Boron doping of silicon is achieved by employing a diode parallel-plate-type dc plasma reactor, where diborane (B2H6) gas diluted with Ar (0.5 mol %) is used as doping gas. Total boron concentration changes from 1.17X10(15) to 1.82X10(15) atoms with varying applied dc bias voltage, V(dc), from 1600 to 3000 V. Shallow and low sheet resistance highly doped p(p+) layer is formed with annealing of the layer doped above total doping concentration of 1.20X10(15) atoms. Peak carrier concentration of 2.20X10(20)/cm3 and a sheet resistance of 86 OMEGA/square are attained in 140 nm depth p+ layer.

引用

页码：90 / 92

页数：3

共 11 条

[1]

CURRENT MI, 1992, NUCL INSTRUM METHODS, V44, P1562

[2]

HARA T, 1993, 11TH P S ION BEAM TE, P1

[3]

HARA T, 1990, I ELECT ENG JPN, V57, P560

[4] FORMATION OF ULTRASHALLOW-P+ LAYERS IN SILICON BY THERMAL-DIFFUSION OF BORON AND BY SUBSEQUENT RAPID THERMAL ANNEALING [J].