THE EFFECTS OF TITANIUM SILICIDE FORMATION ON DOPANT REDISTRIBUTION

被引：28

作者：

OSBURN, CM

BRAT, T

SHARMA, D

GRIFFIS, D

CORCORAN, S

LIN, S

CHU, WK

PARIKH, N

机构：

[1] N CAROLINA STATE UNIV, RALEIGH, NC 27607 USA

[2] UNIV N CAROLINA, CHAPEL HILL, NC 27514 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1988年 / 135卷 / 06期

关键词：

D O I：

10.1149/1.2096041

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1490 / 1504

页数：15

共 54 条

[1] DEVELOPMENT OF THE SELF-ALIGNED TITANIUM SILICIDE PROCESS FOR VLSI APPLICATIONS [J].

ALPERIN, ME ;

HOLLAWAY, TC ;

HAKEN, RA ;

GOSMEYER, CD ;

KARNAUGH, RV ;

PARMANTIE, WD .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1985, 20 (01) :61-69

[2] JUNCTION LEAKAGE IN TITANIUM SELF-ALIGNED SILICIDE DEVICES [J].

AMANO, J ;

NAUKA, K ;

SCOTT, MP ;

TURNER, JE ;

TSAI, R .

APPLIED PHYSICS LETTERS, 1986, 49 (12) :737-739

[3] ARSENIC OUT-DIFFUSION DURING TISI2 FORMATION [J].

AMANO, J ;

MERCHANT, P ;

KOCH, T .

APPLIED PHYSICS LETTERS, 1984, 44 (08) :744-746

[4] SELF-ALIGNED TI SILICIDE FORMED BY RAPID THERMAL ANNEALING [J].

BRAT, T ;

OSBURN, CM ;

FINSTAD, T ;

LIU, J ;

ELLINGTON, B .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (07) :1451-1458

[5] CHEMICAL BONDING AND REACTIONS AT TI/SI AND TI/OXYGEN/SI INTERFACES [J].

BUTZ, R ;

RUBLOFF, GW ;

HO, PS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02) :771-775

[6] TISI2 THICKNESS LIMITATIONS FOR USE WITH SHALLOW JUNCTIONS AND SWAMI OR LOCOS ISOLATION [J].

CHEN, DC ;

CASS, TR ;

TURNER, JE ;

MERCHANT, PP ;

CHIU, KY .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (10) :1463-1469

[7] TITANIUM SILICIDE FORMATION ON BORON-IMPLANTED SILICON [J].

CHOW, TP ;

KATZ, W ;

GOEHNER, R ;

SMITH, G .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (08) :1914-1918

[8]

DHEURLE FM, 1986, MATER RES SOC S P, V52, P261

[9] BORON, PHOSPHORUS, AND ARSENIC DIFFUSION IN TISI2 [J].

GAS, P ;

DELINE, V ;

DHEURLE, FM ;

MICHEL, A ;

SCILLA, G .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (05) :1634-1639

[10] APPLICATION OF THE SELF-ALIGNED TITANIUM SILICIDE PROCESS TO VERY LARGE-SCALE INTEGRATED N-METAL-OXIDE-SEMICONDUCTOR AND COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TECHNOLOGIES [J].

HAKEN, RA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (06) :1657-1663

← 1 2 3 4 5 6 →