THE EFFECTS OF TITANIUM SILICIDE FORMATION ON DOPANT REDISTRIBUTION

被引:28
作者
OSBURN, CM
BRAT, T
SHARMA, D
GRIFFIS, D
CORCORAN, S
LIN, S
CHU, WK
PARIKH, N
机构
[1] N CAROLINA STATE UNIV, RALEIGH, NC 27607 USA
[2] UNIV N CAROLINA, CHAPEL HILL, NC 27514 USA
关键词
D O I
10.1149/1.2096041
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:1490 / 1504
页数:15
相关论文
共 54 条
[41]  
SHARMA D, 1987, 1ST INT C ULSI EL SO
[42]  
Shibata T., 1981, International Electron Devices Meeting, P647
[43]  
SOFIELD CJ, 1985, MATERIALS RES SOC S, V35, P445
[44]  
TANIELIAN M, 1988, UNPUB J ELECTROCHEMI, V135
[45]   SILICIDE AND SCHOTTKY-BARRIER FORMATION IN THE TI-SI AND THE TI-SIOX-SI SYSTEMS [J].
TAUBENBLATT, MA ;
HELMS, CR .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (09) :6308-6315
[46]   HIGH-TEMPERATURE PROCESS LIMITATION ON TISI2 [J].
TING, CY ;
DHEURLE, FM ;
IYER, SS ;
FRYER, PM .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (12) :2621-2625
[47]  
TING CY, 1982, ELECTROCHEMICAL SOC, P224
[48]  
TSENG HH, 1988, UNPUB J ELECTROCHEMI, V135
[49]  
TSUKAMOTO K, 1984, 16TH INT C SOL STAT, P47
[50]   DIFFUSION OF ION-IMPLANTED AS IN TISI2 [J].
VANOMMEN, AH ;
VANHOUTUM, HJW ;
THEUNISSEN, AML .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (02) :627-630