LOCALIZED ELECTRON-STATES IN SEMICONDUCTORS

[31] DEGENERATE N-TYPE GAAS DOPED WITH CR - AN INTERMEDIATE-VALENCE AND OR KONDO SYSTEM [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (07): : 1431 - 1437

[32] HAM FS, 1965, PHYS REV, V138, P1727

[33] PHONON SPECTROSCOPY OF CHROMIUM-DOPED GAAS USING SUPERCONDUCTING TUNNEL-JUNCTIONS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (27): : 5559 - 5580

[34] TRENDS IN THE ELECTRONIC-PROPERTIES OF SUBSTITUTIONAL 3D TRANSITION-METAL IMPURITIES IN GAAS [J]. PHYSICAL REVIEW B, 1980, 22 (10): : 4590 - 4599

[35] JAROS M, 1980, ADV PHYS, V29, P404

[36] Jaros M, 1982, DEEP LEVELS SEMICOND

[37] INTERMEDIATE VALENCE - VIEW OF THEORETICAL SITUATION [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1978, 11 (19): : 3919 - 3947

[38] CHROMIUM AS A HOLE TRAP IN GAP AND GAAS [J]. APPLIED PHYSICS LETTERS, 1980, 36 (09) : 747 - 748

[39] Killoran N., 1980, Semi-Insulating III-V Materials, P190

[40] KITTEL C, 1976, SOLID STATE PHYSICS

[31] DEGENERATE N-TYPE GAAS DOPED WITH CR - AN INTERMEDIATE-VALENCE AND OR KONDO SYSTEM [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (07): : 1431 - 1437

[32] HAM FS, 1965, PHYS REV, V138, P1727

[33] PHONON SPECTROSCOPY OF CHROMIUM-DOPED GAAS USING SUPERCONDUCTING TUNNEL-JUNCTIONS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (27): : 5559 - 5580

[34] TRENDS IN THE ELECTRONIC-PROPERTIES OF SUBSTITUTIONAL 3D TRANSITION-METAL IMPURITIES IN GAAS [J]. PHYSICAL REVIEW B, 1980, 22 (10): : 4590 - 4599

[35] JAROS M, 1980, ADV PHYS, V29, P404

[36] Jaros M, 1982, DEEP LEVELS SEMICOND

[37] INTERMEDIATE VALENCE - VIEW OF THEORETICAL SITUATION [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1978, 11 (19): : 3919 - 3947

[38] CHROMIUM AS A HOLE TRAP IN GAP AND GAAS [J]. APPLIED PHYSICS LETTERS, 1980, 36 (09) : 747 - 748

[39] Killoran N., 1980, Semi-Insulating III-V Materials, P190

[40] KITTEL C, 1976, SOLID STATE PHYSICS