COMPARISON OF THE THEORETICAL AND EXPERIMENTAL DIFFERENTIAL GAIN IN STRAINED LAYER INGAAS/GAAS QUANTUM-WELL LASERS

被引：24

作者：

LESTER, LF

OFFSEY, SD

RIDLEY, BK

SCHAFF, WJ

FOREMAN, BA

EASTMAN, LF

机构：

[1] CORNELL UNIV,NATL NANOFABRICAT FACIL,ITHACA,NY 14853

[2] UNIV ESSEX,DEPT PHYS,COLCHESTER CO4 3SQ,ESSEX,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 10期

关键词：

D O I：

10.1063/1.105543

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A theoretical model that uses simple, analytic valence band equations to calculate the differential pin in strained layer InGaAs/GaAs quantum wells shows good agreement with experimental differential gain values obtained from multiple quantum well strained layer lasers. The differential gain in these devices is 7 times greater than in bulk, p-type doped InGaAsP lasers. Calculations including nonlinear damping effects indicate that modulation bandwidths exceeding 60 GHz should be achievable in strained layer quantum well lasers.

引用

页码：1162 / 1164

页数：3

共 18 条

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