A NEW MODEL FOR THE ABSORPTION-COEFFICIENT OF NARROW-GAP (HG,CD)TE THAT SIMULTANEOUSLY CONSIDERS BAND TAILS AND BAND FILLING

被引：13

作者：

HERRMANN, KH ^{[1
]}

HAPP, M ^{[1
]}

KISSEL, H ^{[1
]}

MOLLMANN, KP ^{[1
]}

TOMM, JW ^{[1
]}

BECKER, CR ^{[1
]}

KRAUS, MM ^{[1
]}

YUAN, S ^{[1
]}

LANDWEHR, G ^{[1
]}

机构：

[1] UNIV WURZBURG,INST PHYS,MBE LAB,W-8700 WURZBURG,GERMANY

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 73卷 / 07期

关键词：

D O I：

10.1063/1.352954

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A semiempirical model is presented that correlates the broadening of the absorption edge with both transitions below the energy gap and with transitions by the Kane band model. This model correctly fits both the absorption and luminescence spectra of narrow-gap (Hg,Cd)Te samples that have been grown by the traveling heater method as well as by molecular-beam epitaxy. The accuracy of the band-gap determination is enhanced by this model.

引用

页码：3486 / 3492

页数：7

共 20 条

[1] GAIN-FREQUENCY-CURRENT RELATION FOR PB1-X SNX TE DOUBLE HETEROSTRUCTURE LASERS [J].

ANDERSON, WW .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1977, 13 (07) :532-543

[2] ABSORPTION CONSTANT OF PB1-XSNXTE AND HG1-XCDXTE ALLOYS [J].

ANDERSON, WW .

INFRARED PHYSICS, 1980, 20 (06) :363-372

[3] THE ORIENTATION INDEPENDENCE OF THE CDTE-HGTE VALENCE BAND OFFSET AS DETERMINED BY X-RAY PHOTOELECTRON-SPECTROSCOPY [J].

BECKER, CR ;

WU, YS ;

WAAG, A ;

KRAUS, MM ;

LANDWEHR, G .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (12C) :C76-C79

[4] OPTICAL ABSORPTION IN HGTE + HGCDTE [J].

BLUE, MD .

PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 134 (1A) :A226-&

[5] ENERGY-GAP VERSUS ALLOY COMPOSITION AND TEMPERATURE IN HG1-XCDXTE [J].

CHU, JH ;

XU, SH ;

TANG, DY .

APPLIED PHYSICS LETTERS, 1983, 43 (11) :1064-1066

[6] THE EXPONENTIAL OPTICAL-ABSORPTION BAND TAIL OF HG1-XCDXTE [J].

FINKMAN, E ;

SCHACHAM, SE .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (10) :2896-2900

[7] CARRIER LOCALIZATION IN LOW-BANDGAP HG1-XCDXTE CRYSTALS, STUDIED BY PHOTOLUMINESCENCE [J].

FUCHS, F ;

KOIDL, P .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (12C) :C71-C75

[8] A NEW APPROACH TO CRYSTAL-GROWTH OF HG1-XCDXTE BY THE TRAVELING HEATER METHOD (THM) [J].

GILLE, P ;

KIESSLING, FM ;

BURKERT, M .

JOURNAL OF CRYSTAL GROWTH, 1991, 114 (1-2) :77-86

[9] VARIABLE MAGNETIC-FIELD HALL-EFFECT MEASUREMENTS AND ANALYSES OF HIGH-PURITY, HG VACANCY (P-TYPE) HGCDTE [J].

GOLD, MC ;

NELSON, DA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (04) :2040-2046

[10] ENERGY-GAP VERSUS ALLOY COMPOSITION AND TEMPERATURE IN HG1-XCDXTE [J].

HANSEN, GL ;

SCHMIT, JL ;

CASSELMAN, TN .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :7099-7101

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