METAL-AMORPHOUS SILICON BARRIER, INTERPRETATION OF CAPACITANCE AND CONDUCTANCE MEASUREMENTS

被引：37

作者：

SNELL, AJ

MACKENZIE, KD

LECOMBER, PG

SPEAR, WE

机构：

来源：

关键词：

D O I：

10.1016/0022-3093(80)90659-6

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：593 / 598

页数：6

共 7 条

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LECOMBER, PG ;

SPEAR, WE .

[2]

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[3] FIELD AND THERMIONIC-FIELD EMISSION IN SCHOTTKY BARRIERS [J].

PADOVANI, FA ;

STRATTON, R .

[4]

Rhoderick E.H., 1978, METAL SEMICONDUCTORS

[5]

SNELL AJ, PHIL MAG

[6] ELECTRONIC PROPERTIES OF SUBSTITUTED DOPED AMORPHOUS SI AND GE [J].

SPEAR, WE ;

LECOMBER, PG .

PHILOSOPHICAL MAGAZINE, 1976, 33 (06) :935-949

[7] INVESTIGATION OF AMORPHOUS-SILICON BARRIER AND P-N-JUNCTION [J].

SPEAR, WE ;

LECOMBER, PG ;

SNELL, AJ .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 38 (03) :303-317