HIGH-PERFORMANCE W-BAND INALAS-INGAAS-INP HEMTS

被引：16

作者：

STREIT, DC

TAN, KL

DIA, RM

HAN, AC

LIU, PH

YEN, HC

CHOW, PD

机构：

[1] TRW Electronics and Technology Division, Redondo Beach

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 13期

关键词：

TRANSISTORS; SEMICONDUCTOR DEVICES AND MATERIALS;

D O I：

10.1049/el:19910716

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

0.15-mu-m T-gate lattice-matched In0.52Al0.48As-In0.53 Ga0.47As-InP HEMTs with a device minimum noise figure of 1.7 dB with 7.7 dB associated gain at 93 GHz have been fabricated. A single-ended active mixer was fabricated using these devices, and a conversion gain of 2.4 dB was measured with 7.3 dB single-sideband noise figure at 94 GHz. This is the first reported active mixer conversion gain at W band.

引用

页码：1149 / 1150

页数：2

共 7 条

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