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EFFECTS OF BOMBARDMENT BY LOW-ENERGY NEUTRAL PARTICLES ON SILICON DIOXIDE FILMS
被引:7
作者
:
MCCAUGHAN, DV
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
MCCAUGHAN, DV
KUSHNER, RA
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
KUSHNER, RA
SIMMS, DL
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
SIMMS, DL
WHITE, CW
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
WHITE, CW
机构
:
[1]
BELL TEL LABS INC,MURRAY HILL,NJ 07974
[2]
OAK RIDGE NATL LAB,OAK RIDGE,TN 37830
来源
:
JOURNAL OF APPLIED PHYSICS
|
1980年
/ 51卷
/ 01期
关键词
:
D O I
:
10.1063/1.327370
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:299 / 304
页数:6
相关论文
共 19 条
[1]
SURFACE POTENTIAL FLUCTUATIONS GENERATED BY INTERFACE CHARGE INHOMOGENEITIES IN MOS DEVICES
[J].
BREWS, JR
论文数:
0
引用数:
0
h-index:
0
BREWS, JR
.
JOURNAL OF APPLIED PHYSICS,
1972,
43
(05)
:2306
-&
[2]
CASTAGNE R, 1968, CR ACAD SCI B PHYS, V267, P866
[3]
APPLICATION OF TRIANGULAR VOLTAGE SWEEP METHOD TO MOBILE CHARGE STUDIES IN MOS STRUCTURES
[J].
CHOU, NJ
论文数:
0
引用数:
0
h-index:
0
CHOU, NJ
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(04)
:601
-&
[4]
EFFECT OF BOMBARDMENT BY GLASS-FORMING IONS ON THERMALLY STIMULATED IONIC-CONDUCTIVITY OF SODIUM IN SIO2
[J].
HICKMOTT, TW
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
HICKMOTT, TW
.
PHYSICAL REVIEW LETTERS,
1974,
32
(02)
:65
-67
[5]
PROTON AND SODIUM TRANSPORT IN SIO2 FILMS
[J].
HOFSTEIN, SR
论文数:
0
引用数:
0
h-index:
0
HOFSTEIN, SR
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1967,
ED14
(11)
:749
-+
[6]
DEPENDENCE OF MOS DEVICE RADIATION-SENSITIVITY ON OXIDE IMPURITIES
[J].
HUGHES, HL
论文数:
0
引用数:
0
h-index:
0
机构:
USN,RES LAB,WASHINGTON,DC 20390
HUGHES, HL
;
BAXTER, RD
论文数:
0
引用数:
0
h-index:
0
机构:
USN,RES LAB,WASHINGTON,DC 20390
BAXTER, RD
;
PHILLIPS, B
论文数:
0
引用数:
0
h-index:
0
机构:
USN,RES LAB,WASHINGTON,DC 20390
PHILLIPS, B
.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1972,
NS19
(06)
:256
-263
[7]
A QUASI-STATIC TECHNIQUE FOR MOS C-V AND SURFACE STATE MEASUREMENTS
[J].
KUHN, M
论文数:
0
引用数:
0
h-index:
0
KUHN, M
.
SOLID-STATE ELECTRONICS,
1970,
13
(06)
:873
-+
[8]
ION NEUTRALIZATION PROCESSES AT INSULATOR SURFACES AND CONSEQUENT IMPURITY MIGRATION EFFECTS IN SIO2 FILMS
[J].
MCCAUGHAN, DV
论文数:
0
引用数:
0
h-index:
0
机构:
BELL LABS, MURRAY HILL, NJ 07974 USA
BELL LABS, MURRAY HILL, NJ 07974 USA
MCCAUGHAN, DV
;
KUSHNER, RA
论文数:
0
引用数:
0
h-index:
0
机构:
BELL LABS, MURRAY HILL, NJ 07974 USA
BELL LABS, MURRAY HILL, NJ 07974 USA
KUSHNER, RA
;
MURPHY, VT
论文数:
0
引用数:
0
h-index:
0
机构:
BELL LABS, MURRAY HILL, NJ 07974 USA
BELL LABS, MURRAY HILL, NJ 07974 USA
MURPHY, VT
.
PHYSICAL REVIEW LETTERS,
1973,
30
(13)
:614
-617
[9]
LOW-ENERGY ION-BOMBARDMENT OF SILICON DIOXIDE FILMS ON SILICON .2. INERT AMBIENT ANNEALING OF DEGRADATION IN MOS DEVICES
[J].
MCCAUGHAN, DV
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS, MURRAY HILL, NJ 07974 USA
BELL TEL LABS, MURRAY HILL, NJ 07974 USA
MCCAUGHAN, DV
;
MURPHY, VT
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS, MURRAY HILL, NJ 07974 USA
BELL TEL LABS, MURRAY HILL, NJ 07974 USA
MURPHY, VT
.
JOURNAL OF APPLIED PHYSICS,
1973,
44
(07)
:3182
-3190
[10]
DIFFERENCES IN SODIUM-TRANSPORT IN SIO2-FILMS CAUSED BY ION AND NEUTRAL-PARTICLE BOMBARDMENT
[J].
MCCAUGHAN, DV
论文数:
0
引用数:
0
h-index:
0
机构:
OAK RIDGE NATL LAB,OAK RIDGE,TN 37830
MCCAUGHAN, DV
;
WHITE, CW
论文数:
0
引用数:
0
h-index:
0
机构:
OAK RIDGE NATL LAB,OAK RIDGE,TN 37830
WHITE, CW
;
KUSHNER, RA
论文数:
0
引用数:
0
h-index:
0
机构:
OAK RIDGE NATL LAB,OAK RIDGE,TN 37830
KUSHNER, RA
;
SIMMS, DL
论文数:
0
引用数:
0
h-index:
0
机构:
OAK RIDGE NATL LAB,OAK RIDGE,TN 37830
SIMMS, DL
.
APPLIED PHYSICS LETTERS,
1979,
35
(05)
:405
-407
←
1
2
→
共 19 条
[1]
SURFACE POTENTIAL FLUCTUATIONS GENERATED BY INTERFACE CHARGE INHOMOGENEITIES IN MOS DEVICES
[J].
BREWS, JR
论文数:
0
引用数:
0
h-index:
0
BREWS, JR
.
JOURNAL OF APPLIED PHYSICS,
1972,
43
(05)
:2306
-&
[2]
CASTAGNE R, 1968, CR ACAD SCI B PHYS, V267, P866
[3]
APPLICATION OF TRIANGULAR VOLTAGE SWEEP METHOD TO MOBILE CHARGE STUDIES IN MOS STRUCTURES
[J].
CHOU, NJ
论文数:
0
引用数:
0
h-index:
0
CHOU, NJ
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(04)
:601
-&
[4]
EFFECT OF BOMBARDMENT BY GLASS-FORMING IONS ON THERMALLY STIMULATED IONIC-CONDUCTIVITY OF SODIUM IN SIO2
[J].
HICKMOTT, TW
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
HICKMOTT, TW
.
PHYSICAL REVIEW LETTERS,
1974,
32
(02)
:65
-67
[5]
PROTON AND SODIUM TRANSPORT IN SIO2 FILMS
[J].
HOFSTEIN, SR
论文数:
0
引用数:
0
h-index:
0
HOFSTEIN, SR
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1967,
ED14
(11)
:749
-+
[6]
DEPENDENCE OF MOS DEVICE RADIATION-SENSITIVITY ON OXIDE IMPURITIES
[J].
HUGHES, HL
论文数:
0
引用数:
0
h-index:
0
机构:
USN,RES LAB,WASHINGTON,DC 20390
HUGHES, HL
;
BAXTER, RD
论文数:
0
引用数:
0
h-index:
0
机构:
USN,RES LAB,WASHINGTON,DC 20390
BAXTER, RD
;
PHILLIPS, B
论文数:
0
引用数:
0
h-index:
0
机构:
USN,RES LAB,WASHINGTON,DC 20390
PHILLIPS, B
.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1972,
NS19
(06)
:256
-263
[7]
A QUASI-STATIC TECHNIQUE FOR MOS C-V AND SURFACE STATE MEASUREMENTS
[J].
KUHN, M
论文数:
0
引用数:
0
h-index:
0
KUHN, M
.
SOLID-STATE ELECTRONICS,
1970,
13
(06)
:873
-+
[8]
ION NEUTRALIZATION PROCESSES AT INSULATOR SURFACES AND CONSEQUENT IMPURITY MIGRATION EFFECTS IN SIO2 FILMS
[J].
MCCAUGHAN, DV
论文数:
0
引用数:
0
h-index:
0
机构:
BELL LABS, MURRAY HILL, NJ 07974 USA
BELL LABS, MURRAY HILL, NJ 07974 USA
MCCAUGHAN, DV
;
KUSHNER, RA
论文数:
0
引用数:
0
h-index:
0
机构:
BELL LABS, MURRAY HILL, NJ 07974 USA
BELL LABS, MURRAY HILL, NJ 07974 USA
KUSHNER, RA
;
MURPHY, VT
论文数:
0
引用数:
0
h-index:
0
机构:
BELL LABS, MURRAY HILL, NJ 07974 USA
BELL LABS, MURRAY HILL, NJ 07974 USA
MURPHY, VT
.
PHYSICAL REVIEW LETTERS,
1973,
30
(13)
:614
-617
[9]
LOW-ENERGY ION-BOMBARDMENT OF SILICON DIOXIDE FILMS ON SILICON .2. INERT AMBIENT ANNEALING OF DEGRADATION IN MOS DEVICES
[J].
MCCAUGHAN, DV
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS, MURRAY HILL, NJ 07974 USA
BELL TEL LABS, MURRAY HILL, NJ 07974 USA
MCCAUGHAN, DV
;
MURPHY, VT
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS, MURRAY HILL, NJ 07974 USA
BELL TEL LABS, MURRAY HILL, NJ 07974 USA
MURPHY, VT
.
JOURNAL OF APPLIED PHYSICS,
1973,
44
(07)
:3182
-3190
[10]
DIFFERENCES IN SODIUM-TRANSPORT IN SIO2-FILMS CAUSED BY ION AND NEUTRAL-PARTICLE BOMBARDMENT
[J].
MCCAUGHAN, DV
论文数:
0
引用数:
0
h-index:
0
机构:
OAK RIDGE NATL LAB,OAK RIDGE,TN 37830
MCCAUGHAN, DV
;
WHITE, CW
论文数:
0
引用数:
0
h-index:
0
机构:
OAK RIDGE NATL LAB,OAK RIDGE,TN 37830
WHITE, CW
;
KUSHNER, RA
论文数:
0
引用数:
0
h-index:
0
机构:
OAK RIDGE NATL LAB,OAK RIDGE,TN 37830
KUSHNER, RA
;
SIMMS, DL
论文数:
0
引用数:
0
h-index:
0
机构:
OAK RIDGE NATL LAB,OAK RIDGE,TN 37830
SIMMS, DL
.
APPLIED PHYSICS LETTERS,
1979,
35
(05)
:405
-407
←
1
2
→