JUNCTION PROPERTIES AND GAP STATES IN NB-DOPED TIO2 THIN-FILMS

被引：10

作者：

OKAMURA, T ^{[1
]}

OKUSHI, H ^{[1
]}

机构：

[1] KYOCERA CORP,CENT RES LAB,KOKUBU,KAGOSHIMA 89943,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1993年 / 32卷 / 3B期

关键词：

TIO2; THIN FILM; SOL-GEL; SEMICONDUCTOR; HETEROJUNCTION; ICTS; C-V; IV; NB; DOPANT;

D O I：

10.1143/JJAP.32.L454

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nb-doped TiO2 thin films were successfully prepared on p-type crystalline Si substrates using the sol-gel process. The current-voltage (I-V) characteristics of the heterojunctions between TiO2 and Si show a rectification and the capacitance-voltage (C-V) characteristics an approximate linear C-2-V relationship in the reverse-bias condition. By application of an isothermal capacitance transient spectroscopy (ICTS) method on these junction diodes, it is found that two gap states are located at 0.027 eV and 0.22 eV below the conduction band edge (E(c)).

引用

页码：L454 / L457

页数：4

共 12 条

[1] ELECTRON-TRANSPORT PROPERTIES IN RUTILE FROM 6-K TO 40-K
DEFORD, JW
JOHNSON, OW
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (02) : 889 - 897
[2] LOW AND HIGH-TEMPERATURE TIO2 OXYGEN SENSORS
KIRNER, U
SCHIERBAUM, KD
GOPEL, W
LEIBOLD, B
NICOLOSO, N
WEPPNER, W
FISCHER, D
CHU, WF
[J]. SENSORS AND ACTUATORS B-CHEMICAL, 1990, 1 (1-6) : 103 - 107
[3] INVESTIGATION OF TRAPPING STATES IN A NB-DOPED RUTILE BY ADMITTANCE SPECTROSCOPY
KOBAYASHI, K
TAKATA, M
FUJIMURA, Y
OKAMOTO, S
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (12) : 4191 - 4196
[4] OPTICALLY AND THERMALLY INDUCED REVERSIBLE CHANGES OF MIDGAP STATES IN UNDOPED A-SI-H
MATSUURA, H
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1989, 114 : 609 - 611
[5] A NOVEL METHOD FOR DETERMINING THE GAP-STATE PROFILE AND ITS APPLICATION TO AMORPHOUS SI1-XGE-H FILMS
MATSUURA, H
[J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (04) : 1964 - 1973
[6] PREPARATION OF N-ZNO/P-SI HETEROJUNCTION BY SOL-GEL PROCESS
OKAMURA, T
SEKI, Y
NAGAKARI, S
OKUSHI, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1992, 31 (6B): : L762 - L764
[7] JUNCTION PROPERTIES AND GAP STATES OF ZNO THIN-FILM PREPARED BY SOL-GEL PROCESS
OKAMURA, T
SEKI, Y
NAGAKARI, S
OKUSHI, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (9B): : 3218 - 3220
[8] ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY FOR DETERMINATION OF DEEP LEVEL PARAMETERS
OKUSHI, H
TOKUMARU, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (06) : L335 - L338
[9] CHARACTERIZATION OF EL2 IN GAAS WAFERS BY SCANNING ISOTHERMAL TRANSIENT SPECTROSCOPY
OKUSHI, H
TOKUMARU, Y
NAKA, H
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (1A) : A196 - A201
[10] OKUSHI H, 1986, 867 EL LAB RES EL LA

← 1 2 →