PREPARATION OF N-ZNO/P-SI HETEROJUNCTION BY SOL-GEL PROCESS

被引：46

作者：

OKAMURA, T ^{[1
]}

SEKI, Y ^{[1
]}

NAGAKARI, S ^{[1
]}

OKUSHI, H ^{[1
]}

机构：

[1] KYOCERA CORP,CENT RES LAB,KAGOSHIMA 89943,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1992年 / 31卷 / 6B期

关键词：

ZNO; THIN FILM; SOL-GEL; DIODE; SEMICONDUCTOR; HETEROJUNCTION;

D O I：

10.1143/JJAP.31.L762

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

N-type ZnO thin films with a crack and columnar-free structure were successfully prepared on p-type Si substrates by the sol-gel process. The current-voltage (I-V) characteristics of the heterojunction of n-ZnO/p-Si show a rectification with strong electrical breakdown strength of higher than 10(7) V/cm. The capacitance-voltage (C-V) characteristics show an approximate linear C-2-V relationship in the reverse bias condition. These results indicate that the ZnO films prepared by the sol-gel process are good enough to be used as a semiconducting material in electrical devices.

引用

页码：L762 / L764

页数：3

共 12 条

[1] HIRANO S, 1988, ADV CERAM MATER, V3, P503
[2] HIRANO S, 1988, CERAM T, V1, P171
[3] EFFECT OF WATER-VAPOR ON THE GROWTH OF TEXTURED ZNO-BASED FILMS FOR SOLAR-CELLS BY DC-MAGNETRON SPUTTERING
NAKADA, T
OHKUBO, Y
KUNIOKA, A
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (12A): : 3344 - 3348
[4] ELECTRICAL AND OPTICAL-PROPERTIES OF ZINC-OXIDE THIN-FILMS PREPARED BY RF MAGNETRON SPUTTERING FOR TRANSPARENT ELECTRODE APPLICATIONS
NANTO, H
MINAMI, T
SHOOJI, S
TAKATA, S
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (04) : 1029 - 1034
[5] NAYER PS, 1982, J APPL PHYS, V53, P1069
[6] HIGH-RESOLUTION ELECTRON-MICROSCOPY ON EPITAXIAL PB(MG1/3NB2/3)O3 FILM PREPARED BY SOL-GEL METHOD
OKUWADA, K
NAKAMURA, S
IMAI, M
KAKUNO, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (6A): : L1052 - L1055
[7] GROWTH OF C-AXIS ORIENTED ZNO THIN-FILMS WITH HIGH DEPOSITION RATE ON SILICON BY CVD METHOD
SHIMIZU, M
SHIOSAKI, T
KAWABATA, A
[J]. JOURNAL OF CRYSTAL GROWTH, 1982, 57 (01) : 94 - 100
[8] LASER-INDUCED MOCVD OF ZNO THIN-FILMS
SHIMIZU, M
KATAYAMA, T
TANAKA, Y
SHIOSAKI, T
KAWABATA, A
[J]. JOURNAL OF CRYSTAL GROWTH, 1990, 101 (1-4) : 171 - 175
[9] SZE SM, 1981, PHYS SEMICONDUCTOR D, P63
[10] TEXTURED ZNO THIN-FILMS FOR SOLAR-CELLS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
WENAS, WW
YAMADA, A
KONAGAI, M
TAKAHASHI, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1991, 30 (3B): : L441 - L443

← 1 2 →