JUNCTION PROPERTIES AND GAP STATES OF ZNO THIN-FILM PREPARED BY SOL-GEL PROCESS

被引：24

作者：

OKAMURA, T ^{[1
]}

SEKI, Y ^{[1
]}

NAGAKARI, S ^{[1
]}

OKUSHI, H ^{[1
]}

机构：

[1] KYOCERA CORP,CENT RES LAB,KOKUBU,KAGOSHIMA 89943,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1992年 / 31卷 / 9B期

关键词：

ZNO; THIN FILM; SOL-GEL; DIODE; SEMICONDUCTOR; HETEROJUNCTION; ICTS; C-V; IV;

D O I：

10.1143/JJAP.31.3218

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

N-type ZnO thin films with a crack- and columnar-free structure were successfully prepared on p-type Si substrates by the sol-gel process. The current-voltage (I-V) characteristics of the heterojunction of n-ZnO/p-Si show a rectification, and the capacitance-voltage (C-V) characteristics show an approximately linear C-2-V relationship in the reverse bias condition. In the ZnO thin film, two gap states located at 0.054 eV and 0.12 eV below the conduction band were measured by isothermal capacitance transient spectroscopy (ICTS).

引用

页码：3218 / 3220

页数：3

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