THE WARM-PRESTRESSING EFFECT IN SILICON

被引：10

作者：

BOOTH, AS

COSGRAVE, M

ROBERTS, SG

机构：

[1] Department of Materials, University of Oxford, Oxford, OX1 3PH England, Parks Road

来源：

ACTA METALLURGICA ET MATERIALIA | 1991年 / 39卷 / 02期

关键词：

D O I：

10.1016/0956-7151(91)90267-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Four-point bend experiments are reported in which precracked silicon specimens were subjected to a high-temperature prestress, then tested at room temperature. An increase in the room temperature fracture stress was found; the effect increases with increasing prestressing temperature. These results are interpreted in terms of a model based on dislocation dynamics near a crack; a good fit to the experimental results is found. The model is also used to predict the results of other "warm-prestressing" experiments.

引用

页码：191 / 197

页数：7

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