SPIN-DEPENDENT PHOTOCONDUCTIVITY IN HYDROGENATED AMORPHOUS-GERMANIUM AND SILICON-GERMANIUM ALLOYS

被引:16
作者
GRAEFF, CFO
STUTZMANN, M
BRANDT, MS
机构
[1] MAX PLANCK INST FESTKORPERFORSCH,D-70569 STUTTGART 80,GERMANY
[2] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
[3] TECH UNIV MUNICH,WALTER SCHUTTKY INST,D-85478 GARCHING,GERMANY
来源
PHYSICAL REVIEW B | 1994年 / 49卷 / 16期
关键词
D O I
10.1103/PhysRevB.49.11028
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this work we use spin-dependent photoconductivity (SDPC) to study the recombination process of photoexcited carriers in hydrogenated amorphous germanium (a-Ge:H) and silicon germanium alloys (a-SixGe1-x:H). The a-Ge:H SDPC signal is found to be strongly affected by the larger spin-orbit coupling, lambda, when compared to a-Si:H (lambda(Ge) almost-equal-to 7 lambda(Si)), which results in a reduced spin-lattice relaxation time. The decrease in the spin-lattice relaxation time gives the following characteristics to the a-Ge:H SDPC signal: (i) small amplitudes (-DELTAsigma/sigma < 10(-6)); (ii) a linear dependence on microwave power, and strong temperature dependence. In a-SixGe1-x:H alloys, the incorporation of Ge is marked by a sudden change in the SDPC signal from Si-like to Ge-like, for x < 0.9. The origin of the spin-dependent recombination in a-Ge:H and a-SixGe1-x:H is discussed.
引用
收藏
页码:11028 / 11034
页数:7
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