GROWTH AND STRUCTURAL-ANALYSIS OF AN ORDERED BORON MONOLAYER IN SI(100)

被引：31

作者：

WEIR, BE

HEADRICK, RL

SHEN, Q

FELDMAN, LC

HYBERTSEN, MS

NEEDELS, M

SCHLUTER, M

HART, TR

机构：

[1] CORNELL UNIV, CORNELL HIGH ENERGY SYNCHROTRON SOURCE, ITHACA, NY 14853 USA

[2] CORNELL UNIV, DEPT APPL ENGN PHYS, ITHACA, NY 14853 USA

[3] STEVENS INST TECHNOL, HOBOKEN, NJ 07030 USA

来源：

PHYSICAL REVIEW B | 1992年 / 46卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.46.12861

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have fabricated and characterized a novel structure: an ordered B monolayer deposited onto Si(100) and capped with epitaxial Si. X-ray structural data, compared to a first-principles model, suggests limited (< 3 monolayers) segregation of the B during Si overgrowth, leaving over half of the B atoms in ordered sites. Ordering persists over length scales comparable to the clean-surface terrace width, as measured by grazing angle x-ray diffraction.

引用

页码：12861 / 12864

页数：4

共 18 条

[1] LATTICE-DISTORTIONS INDUCED BY B, P, AS AND SB IN SILICON [J].