Radiation effects at cryogenic temperatures in Si-JFET, GaAs MESFET, and MOSFET devices

被引：28

作者：

Citterio, M

Rescia, S

Radeka, V

机构：

[1] Brookhaven National Laboratory, Upton, NY

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1995年 / 42卷 / 06期

关键词：

D O I：

10.1109/23.489425

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Front-end electronics for liquid ionization chamber calorimetry at hadron collider experiments may be exposed to substantial levels of ionizing radiation and neutron fluences in a cryogenic environment. Measurements of devices built with rad-hard technologies have shown that devices able to operate in these conditions exist. Several families of devices (Si-JFET's, rad-hard MOSFET's, and GaAs MESFET's) have been irradiated and tested at a stable cryogenic temperature up to doses of 55 Mrad of ionizing radiation and up to neutron fluences of 4 x 10(14) n/cm(2), Radiation effects on de characteristics and on noise will be presented.

引用

收藏

页码：2266 / 2270

页数：5

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