POLARIZATION DEPENDENCE OF OPTICAL-TRANSITIONS IN GAP(110) AND GAAS(110) SURFACES STUDIED WITH SURFACE DIFFERENTIAL REFLECTIVITY

被引：26

作者：

SELCI, S ^{[1
]}

CICCACCI, F ^{[1
]}

CRICENTI, A ^{[1
]}

FELICI, AC ^{[1
]}

GOLETTI, C ^{[1
]}

CHIARADIA, P ^{[1
]}

机构：

[1] CNR,IST STRUTT MAT,I-00044 FRASCATI,ITALY

来源：

SOLID STATE COMMUNICATIONS | 1987年 / 62卷 / 12期

关键词：

D O I：

10.1016/0038-1098(87)90830-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：833 / 834

页数：2

共 14 条

[1] A NOVEL METHOD FOR THE STUDY OF OPTICAL-PROPERTIES OF SURFACES
AMER, NM
OLMSTEAD, MA
[J]. SURFACE SCIENCE, 1983, 132 (1-3) : 68 - 72
[2] OPTICAL-TRANSITIONS ON GAAS [110] SURFACE
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SAFAROV, VI
[J]. SOLID STATE COMMUNICATIONS, 1985, 56 (05) : 449 - 450
[3] OPTICAL-DETECTION OF SURFACE-STATES IN GAAS(110) AND GAP(110)
CHIARADIA, P
CHIAROTTI, G
CICCACCI, F
MEMEO, R
NANNARONE, S
SASSAROLI, P
SELCI, S
[J]. SURFACE SCIENCE, 1980, 99 (01) : 70 - 75
[4] DIFFERENTIAL REFLECTIVITY OF SI(111)2X1 SURFACE WITH POLARIZED-LIGHT - A TEST FOR SURFACE-STRUCTURE
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CRICENTI, A
SELCI, S
CHIAROTTI, G
[J]. PHYSICAL REVIEW LETTERS, 1984, 52 (13) : 1145 - 1147
[5] OPTICAL ABSORPTION OF SURFACE STATES IN ULTRAHIGH VACUUM CLEAVED (111) SURFACES OF GE AND SI
CHIAROTTI, G
NANNARONE, S
PASTORE, R
CHIARADIA, P
[J]. PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (10): : 3398 - +
[6] THE EFFECT OF SURFACE-STATES AND BAND BENDING CHANGE ON REFLECTIVITY OF CLEAVED GAAS(110) AND GAP(110)
CICCACCI, F
SELCI, S
CHIAROTTI, G
CHIARADIA, P
CRICENTI, A
[J]. SURFACE SCIENCE, 1986, 168 (1-3) : 28 - 34
[7] ANGLE-RESOLVED PHOTOEMISSION FROM GAAS (110) SURFACE-STATES
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VANLAAR, J
VANROOY, TL
[J]. PHYSICS LETTERS A, 1978, 65 (04) : 337 - 339
[8] THEORETICAL-STUDY OF THE ELECTRONIC-STRUCTURE OF GAP(110)
MANGHI, F
BERTONI, CM
CALANDRA, C
MOLINARI, E
[J]. PHYSICAL REVIEW B, 1981, 24 (10) : 6029 - 6042
[9] POLARIZATION DEPENDENCE OF GE(111)2X1 SURFACE-STATE ABSORPTION USING PHOTOTHERMAL DISPLACEMENT SPECTROSCOPY - A TEST OF SURFACE RECONSTRUCTION MODELS
OLMSTEAD, MA
AMER, NM
[J]. PHYSICAL REVIEW B, 1984, 29 (12): : 7048 - 7050
[10] DIRECT MEASUREMENT OF THE POLARIZATION DEPENDENCE OF SI(111)2X1 SURFACE-STATE ABSORPTION BY USE OF PHOTOTHERMAL DISPLACEMENT SPECTROSCOPY
OLMSTEAD, MA
AMER, NM
[J]. PHYSICAL REVIEW LETTERS, 1984, 52 (13) : 1148 - 1151

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