INVESTIGATIONS OF ELECTRON-SPIN-RESONANCE ON LIGHT-EMITTING NANO-CRYSTALLITES EMBEDDED IN A-SI-H FILMS

被引:4
作者
LIU, XN
XU, YX
HAN, SY
WANG, LC
JIN, TZ
TONG, S
BAO, XM
机构
[1] Department of Physics, Laboratory of Solid State Microstructures, Center of Material Analysis, Nanjing
关键词
D O I
10.1016/0038-1098(94)90019-1
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We report here the studies of electron spin resonance (ESR) on light emitting nano-crystallites embedded in a-Si:H matrix, which are prepared by plasma enhanced CVD on quartz substrates without any post-processing. The ESR spectra contains three components: (1) A pair of hyperfine lines of axial symmetry with g(//)=1.9967 and g(perpendicular to)=2.0016, and the hyperfine constant 120G; (2) an isotropic line with g=2.0052 and line-width Delta H-pp=10G; (3) an axial symmetric line with g(//)=2.0042 and g(perpendicular to)=2.0057. The dependence of these paramagnetic defects on sample preparation conditions and light emission intensity are presented.
引用
收藏
页码:951 / 955
页数:5
相关论文
共 17 条
[1]   ELECTRON-PARAMAGNETIC RESONANCE STUDY OF POROUS SILICON [J].
BHAT, SV ;
JAYARAM, K ;
MUTHU, DVS ;
SOOD, AK .
APPLIED PHYSICS LETTERS, 1992, 60 (17) :2116-2117
[2]   SPIN-DEPENDENT EFFECTS IN POROUS SILICON [J].
BRANDT, MS ;
STUTZMANN, M .
APPLIED PHYSICS LETTERS, 1992, 61 (21) :2569-2571
[3]   STRAIN BROADENING OF THE DANGLING-BOND RESONANCE AT THE (111)SI-SIO2 INTERFACE [J].
BROWER, KL .
PHYSICAL REVIEW B, 1986, 33 (07) :4471-4478
[4]   SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].
CANHAM, LT .
APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048
[5]   THE STRUCTURE AND PROPERTIES OF NANOSIZE CRYSTALLINE SILICON FILMS [J].
HE, YL ;
YIN, CZ ;
CHENG, GX ;
WANG, LC ;
LIU, XN ;
HU, GY .
JOURNAL OF APPLIED PHYSICS, 1994, 75 (02) :797-803
[6]  
Jia Yongqiang, 1993, Chinese Journal of Semiconductors, V14, P385
[8]   PHOTOLUMINESCENCE FROM NANOCRYSTALLITES EMBEDDED IN HYDROGENATED AMORPHOUS-SILICON FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION [J].
LIU, XN ;
WU, XW ;
BAO, XM ;
HE, YL .
APPLIED PHYSICS LETTERS, 1994, 64 (02) :220-222
[9]  
LIU XN, 1994, ACTA PHYS SINI, V43, P985
[10]   DEFECTS IN POROUS SILICON INVESTIGATED BY OPTICALLY DETECTED AND BY ELECTRON-PARAMAGNETIC-RESONANCE TECHNIQUES [J].
MEYER, BK ;
HOFMANN, DM ;
STADLER, W ;
PETROVAKOCH, V ;
KOCH, F ;
OMLING, P ;
EMANUELSSON, P .
APPLIED PHYSICS LETTERS, 1993, 63 (15) :2120-2122