DESIGN, FABRICATION AND OPERATION OF A HOT-ELECTRON RESONANT TUNNELING TRANSISTOR

被引：3

作者：

REDDY, UK

MEHDI, I

MAINS, RK

HADDAD, GI

机构：

来源：

SOLID-STATE ELECTRONICS | 1989年 / 32卷 / 12期

关键词：

D O I：

10.1016/0038-1101(89)90243-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1377 / 1381

页数：5

共 9 条

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