QUANTUM-WELL LASERS IN OPERATION FOR 4 YEARS

被引：3

作者：

WATERS, RG

YELLEN, SL

机构：

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 25期

关键词：

D O I：

10.1063/1.103811

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

AlGaAs quantum well lasers operating at 808 nm with cw lifetimes exceeding 30 000 h are reported. The devices, grown by metalorganic chemical vapor deposition, were driven at 200 mW total optical power and were not coated. A study of diode configuration shows that longevity is enhanced by using a long cavity and by junction-down mounting.

引用

页码：2644 / 2645

页数：2

共 8 条

[1]

GFEOLLER FR, 1990, J APPL PHYS, V68, P14

[2] LONG-LIVED DRY-ETCHED ALGAAS/GAAS RIDGE WAVE-GUIDE LASER-DIODES [J].